1 document # eprom102 rev or revised july 2007 PY264 8k x 8 reprogrammable prom description the PY264 is an 8kx8 cmos prom. the device is available in windowed packages which when exposed to uv light, the memory content in the prom is erased and can be reprogrammed. eprom technology is used in the memory cells for programming. the eprom re- quires a 12.5v for programming. devices are tested to insure that performance of the device meets the dc and ac specification limits after customer programming. to perform a read operation from the device, cs is low. the memory contents in the address established by the address pins (a 0 to a 12 ) will become available on the outputs (o 0 to o 7 ). the PY264 is available in 24-pin 600 mil ceramic dips (windowed) and plastic dips (non-windowed). functional block diagram pin configuration features eprom technology for reprogramming high speed ? 35/45/55 ns (commercial) ? 35/45/55 ns (military) low power operation: ? 660 mw commercial ? 770 mw military single 5v10% power supply windowed devices for reprogramming fully ttl compatible inputs and outputs standard pinout (jedec approved): ? 24-pin 600 mil windowed cerdip ? 24-pin 600 mil non-windowed plastic dip dip (p8, wd2) note: window on wd2 package only
PY264 page 2 of 8 document # eprom102 rev or maximum ratings (1) symbol parameter value unit v cc power supply pin with ?0.5 to +7 v respect to gnd terminal voltage with ?0.5 to v term respect to gnd v cc +0.5 v (up to 7.0v) v pp program voltage 13 v symbol parameter value unit t a operating temperature ?55 to +125 c t bias temperature under ?55 to +125 c bias t stg storage temperature ?65 to +150 c p t power dissipation 1.0 w i out dc output current 50 ma symbol parameter conditions typ. unit c in input capacitance v in = 0v 10 pf c out output capacitance v out = 0v 10 pf grade (2) ambient temp gnd vcc commercial 0c to 70c 0v 5.0v 10% military -55c to +125c 0v 5.0v 10% recommended operating conditions capacitances (4) (v cc = 5.0v, t a = 25c, f = 1.0mhz) dc electrical characteristics over recommended operating temperature and supply voltage (2) v pp programming supply voltage 12 13 50 v ma programming supply current i pp symbol v ih v il v hc v lc v ol v oh i li i lo parameter input high voltage input low voltage cmos input high voltage cmos input low voltage output low voltage (ttl load) output high voltage (ttl load) input leakage current output leakage current test conditions i ol = +16 ma, v cc = min. i oh = ?4 ma, v cc = min. v cc = max. v in = gnd to v cc v cc = max., ce = v ih , v out = gnd to v cc PY264 min 2.0 ?0.5 (3) v cc ?0.2 ?0.5 (3) 2.4 ?10 ?10 max v cc 0.8 v cc +0.5 0.2 0.4 +10 +10 unit v v v v v v a a i cc symbol parameter temperature range dynamic operating current* commercial military ?35 ?55 unit ma ma power dissipation characteristics vs. speed 120 120 120 100 100 100 ?45 v ihp input high programming voltage 4.75 v v ilp input low programming voltage 0.4 v com ?40 +40 a mil
PY264 page 3 of 8 document # eprom102 rev or ac electrical characteristics?read cycle (v cc = 5v 10%, all temperature ranges) (2) timing waveform of read cycle notes: 1. stresses greater than those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to maximum rating conditions for extended periods may affect reliability. 2. extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. transient inputs with v il and i il not more negative than ?3.0v and ?100ma, respectively, are permissible for pulse widths up to 20 ns. 4. this parameter is sampled and not 100% tested. min max min max min max t aa address to output valid 35 45 55 ns t hzcs1 chip select inactive to high z 20 30 35 ns t acs1 chip select active to output valid 20 30 35 ns t hzcs2 chip select inactive to high z 35 45 55 ns t acs2 chip select active to output valid 35 45 55 ns t pu chip select active to power-up 0 0 0 ns t pd chip slect inactive to power-down 35 45 55 ns unit symbol parameter -45 -35 -55
PY264 page 4 of 8 document # eprom102 rev or device erasure if the device is subjected to wavelengths of light below 4000 angstroms, device erasure will commence. it is therefore recommended to use an opaque label over the window in the event the device will be exposed to lighting for a long time. the uv dose for erasure requires a wavelength of 2,537 angstroms for a minimum dose of 25 wsec/cm 2 . if using a uv lamp of 12 mw/cm 2 , the exposure time is estimated to be 35 minutes. devices should be positioned within 1 inch of the lamp during the erasure process. permanent damage can occur to the devices if exposed to uv light for an extended period of time. mode selection programming pinouts read or output disable a 12 a 11 a 10 a 9 a 8 cs o 7 -o 0 program na vpp latch pgm vfy cs d 7 -d 0 a 12 a 11 a 10 a 9 a 8 v il o 7 -o 0 a 12 a 11 a 10 a 9 a 8 v ih high z v ilp vpp v ilp v ilp v ihp v ilp d 7 -d 0 v ilp vpp v ilp v ihp v ihp v ilp high z v ilp vpp v ilp v ihp v ilp v ilp o 7 -o 0 v ilp vpp v ilp v ihp v ilp v ilp o 7 -o 0 pin function program verify blank check program program inhibit mode read output disable read mode reading the addressed content is the normal operating mode for a programmed device. signals are at normal ttl levels. addressing is applied to the 13 address pins and cs is low. under these conditions, the addressed location contents are presented to the output pins.
PY264 page 5 of 8 document # eprom102 rev or input pulse levels gnd to 3.0v input rise and fall times 3ns input timing reference level 1.5v output timing reference level 1.5v output load see figures 1 and 2 ac test conditions figure 1. output load figure 2. thevenin equivalent * including scope and test fixture. note: because of the ultra-high speed of the PY264, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. long high-inductance leads that cause supply bounce must be avoided by bringing the v cc and ground planes directly up to the contactor fingers. a 0.01 f high frequency capacitor is also required between v cc and ground.
PY264 page 6 of 8 document # eprom102 rev or ordering information * military temperature range with mil-std-883, class b processing. n/a = not available selection guide the PY264 is available in the following temperature, speed and package options. 35 45 55 plastic dip -35pc n/a n/a windowed cerdip n/a -45wc -55wc military temperature windowed cerdip n/a -45wm -55wm military processed* windowed cerdip n/a -45wmb -55wmb commercial temperature range package
PY264 page 7 of 8 document # eprom102 rev or ceramic dual in-line package (windowed) plastic dual in-line package (non-windowed) pkg # # pins symbol min max a 0.175 0.225 b 0.015 0.020 b2 0.045 0.065 c 0.009 0.012 d - 1.280 e 0.505 0.550 ea e l 0.125 0.200 q 0.015 0.060 s1 0.005 - 0 15 wd 0.280 0.100 bsc wd2 24 (600 mil) 0.600 bsc pkg # # pins symbol min max a 0.155 0.200 a1 0.015 0.060 b 0.015 0.020 b2 0.055 0.065 c 0.009 0.012 d 1.230 1.260 e1 0.530 0.550 e 0.570 0.625 e eb 0.610 0.685 l 0.115 0.160 0 15 0.100 bsc p8 24 (600 mil)
PY264 page 8 of 8 document # eprom102 rev or revisions document number : eprom102 document title : PY264 8k x 8 reprogrammable prom rev. issue date orig. of change description of change or jul-2007 jdb new data sheet
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